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STMicroelectronics STF13NM60N-H — Discrete Semiconductors

STF13NM60N-H N-Channel MOSFET, 600 V, 11 A, TO-220FP

MPNSTF13NM60N-H
Obsolete

STMicroelectronics MDmesh™ II N-Channel MOSFET, 600 V Vdss, 11 A Id, 360 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack (TO-220FP), Through Hole, ±25 V Vgs(max), 30 nC gate charge, 790 pF input capacitance.

STMicroelectronics STF13NM60N-H datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF13NM60N-H specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs360mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds790 pF @ 50 V

Product details

600 V MDmesh II MOSFET in a fully isolated TO-220FP

A maximum gate charge of 30 nC at 10 V gate drive, combined with an input capacitance of 790 pF at 50 V drain-source, keeps the switching losses manageable in hard-switched topologies operating in the tens to low hundreds of kilohertz. The 4 V maximum gate threshold at 250 µA drain current means a 10 V gate drive is the practical choice to achieve the rated Rds(on); a logic-level drive at 5 V will not fully enhance the channel.

For sustainment of existing BOM lines, last-time-buy stock and new-old-stock (NOS) are available through independent distribution channels.

Frequently asked questions

What is the replacement or equivalent for STF13NM60N-H?

No official replacement or cross-reference is recorded for the STF13NM60N-H. For a form-fit-function substitute, evaluate other 600 V N-channel MOSFETs in the TO-220FP package with similar Rds(on) and gate charge — parametric matching should be verified against the application's switching frequency and drive voltage.