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STMicroelectronics STF13NK50Z — Discrete Semiconductors

STF13NK50Z MOSFET, N-Ch 500V 11A TO-220FP, SuperMESH

MPNSTF13NK50Z
Active

STMicroelectronics SuperMESH™ series, N-Channel MOSFET, 500V Vdss, 11A Id, 480mOhm Rds(on) at 10V, 47nC Qg, TO-220-3 Full Pack, -55 to 150°C.

$2.6000Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF13NK50Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs480mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs47 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 25 V

Product details

500V, 11A, TO-220FP — switching power design anchor

The STF13NK50Z is an N-channel 500 V, 11 A MOSFET from ST's SuperMESH™ series, built on a planar stripe layout that balances on-resistance with rugged avalanche capability.

Thermal and switching budget

The 30 W power dissipation ceiling at the case (Tc) is a hard limit for heatsink sizing — in a 50°C ambient with a 60°C/W heatsink the usable dissipation drops to about 15 W before the junction hits 150°C. Input capacitance Ciss is 1600 pF at 25 V Vds, which together with the 47 nC gate charge sets the drive current requirement: a 1 A gate driver can switch the 47 nC gate in roughly 47 ns, though the practical turn-on/off time depends on the gate loop inductance and the driver's sink/source asymmetry.

Package and mounting — the full-pack advantage

The TO-220FP (TO-220 Full Pack) isolates the backside tab electrically — the die sits on a moulded resin body, not a metal tab. This means the screw-down tab can contact the heatsink directly without a silicone pad or mica washer, cutting assembly time and thermal resistance. The trade-off is slightly higher RthJC compared to a standard TO-220, so the 30 W dissipation limit is the relevant derating anchor.

For BOM planning, the base product number STF13 means the same die is offered in other packages (STP13NK50Z in TO-220, STW13NK50Z in TO-247) if the board layout or thermal budget changes later.

Frequently asked questions

What is the Rds(on) of STF13NK50Z?

This is the worst-case value at 25°C junction temperature; the typical on-resistance at the same bias is lower, and the datasheet's normalised curve shows Rds(on) roughly doubling at 150°C junction.

What is the closest pin-compatible alternative to STF13NK50Z in this component family?

Within the same SuperMESH series, the STP13NK50Z (TO-220) and STW13NK50Z (TO-247) share the same die and electrical ratings but differ in package. For a direct TO-220FP footprint replacement, check the STF13NK60Z (600 V version) if the voltage margin is tight, or the STF12NK50Z (12 A, similar Rds(on)) — both are in the same package family and share the same pinout.

Does STF13NK50Z have a datasheet?

Yes — the full datasheet is published by STMicroelectronics under the STF13NK50Z ordering code. It includes the safe operating area curves, switching time waveforms, and thermal impedance data needed for transformer-coupled and offline converter design.