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STMicroelectronics STF13N80K5 — Discrete Semiconductors

STF13N80K5 N-Channel MOSFET, 800V 12A TO-220FP, SuperMESH5

MPNSTF13N80K5
Active

STMicroelectronics SuperMESH5™ STF13N80K5, N-Channel MOSFET, 800 Vdss, 12 A continuous drain, 450 mOhm Rds(on) at 10 V, 29 nC gate charge, TO-220 Full Pack, -55°C to 150°C junction.

$3.8300Ref. price · indicative, final on quote
STMicroelectronics STF13N80K5 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF13N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs450mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds870 pF @ 100 V

Product details

The STF13N80K5 is an 800 V, 12 A N-channel MOSFET from ST's SuperMESH5™ series, housed in a TO-220 Full Pack (TO-220FP) through-hole package.

450 mOhm on-resistance and 29 nC gate charge — switching loss trade-off

At 12 A the Rds(on) will be higher — the datasheet curve shows the typical increase with current — so budget conduction loss at full load using the 450 mOhm ceiling as a starting point, then derate for junction temperature. Total gate charge is 29 nC at 10 V Vgs, which is moderate for an 800 V MOSFET. A gate driver delivering 1 A peak can switch this part in roughly 30 ns, keeping crossover losses manageable up to 100 kHz in a hard-switched topology.

Temperature range and sourcing posture

The TO-220FP package's isolated tab simplifies mounting in these environments where chassis grounding is not an option.

Frequently asked questions

What is the Rds(on) of STF13N80K5?

This is the value to use for worst-case conduction loss calculations at the rated drive voltage.