STMicroelectronics MDmesh DM2 series, STF13N60DM2, N-channel MOSFET, 600V Vdss, 11A Id, 365mOhm Rds(on) at 10V, TO-220FP through-hole, -55 to 150°C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ DM2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 365mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 730 pF @ 100 V |
It comes in a TO-220 Full Pack (TO-220FP) through-hole package, which provides electrical isolation between the tab and the heatsink — useful when multiple devices share a common heatsink without insulating pads.
Gate charge is 19 nC at 10 V — a modest number that keeps the gate-drive power low and allows switching frequencies into the tens of kilohertz without a high-current driver.
Yes. The 600 V drain-source rating and 11 A continuous drain current provide ample headroom for a 600 V, 5 A switching application.
The IRF840 is a 500 V, 8 A N-channel MOSFET in a TO-220 package. The STF13N60DM2 has a higher voltage rating (600 V) and current rating (11 A), but comes in a TO-220FP (full-pack) package — the tab is isolated, so the mechanical mounting and thermal interface differ from a standard TO-220. Check the footprint and heatsink interface before substituting.