100 V N-channel with 9.6 mOhm Rds(on) — the conduction loss story
The STMicroelectronics STF130N10F3 is a 100 V N-channel power MOSFET from the STripFET™ III family, built on a planar stripe technology that keeps specific Rds(on) low for its voltage class. For a 10 A load, that works out to under 1 W dissipation in the channel alone, which the TO-220FP full-pack package can handle with a modest heatsink. The 46 A continuous drain rating at 25°C case temperature tells you the silicon can move current; the 35 W power dissipation limit at case temperature tells you the package ceiling.
Gate drive and switching — what 57 nC Qg means for the driver
Gate charge is 57 nC at 10 V Vgs, which is moderate for a 100 V, 46 A die.
Obsolete — no factory orders, only surplus and broker channels
This means the original fab line has shut down, and no new factory orders are accepted. The only sourcing path is through independent distributors and surplus brokers who hold remaining inventory or can locate stock from the spot market.
Package and mounting — TO-220FP full-pack isolation
The through-hole TO-220-3 Full Pack (TO-220FP) package has a fully isolated back tab — no exposed drain tab, which eliminates the need for an insulating washer or thermal pad against the heatsink. The supplier device package designation is TO-220FP, which is the same physical outline. The full-pack construction adds about 1°C/W to the junction-to-case thermal resistance compared to a standard TO-220, so heatsink selection should account for the slightly higher thermal impedance.