Skip to main content
STMicroelectronics STF12PF06 — Discrete Semiconductors

STF12PF06 P-Channel MOSFET, 60 V, 8 A, TO-220FP, Obsolete

MPNSTF12PF06
Obsolete

STMicroelectronics STripFET™ II, STF12PF06, P-Channel MOSFET, 60 Vdss, 8 A continuous drain, 200 mOhm Rds(on) at 10 V, 21 nC gate charge, TO-220-3 Full Pack, -55°C to 175°C.

$1.0737Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF12PF06 specifications
ParameterValue
SeriesSTripFET™ II
FET typeP-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation225W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs200mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds850 pF @ 25 V

Product details

60 V, 8 A P-channel — conduction loss and package

The 200 mOhm maximum on-resistance at 10 A gate drive of 10 V sets the conduction loss floor — at 8 A continuous, expect roughly 12.8 W dissipation in the channel before accounting for temperature derating. Housed in a TO-220-3 Full Pack (TO-220FP) — the fully molded tab is electrically isolated, eliminating the need for a mica insulator and shoulder washer. The trade-off is higher junction-to-case thermal resistance compared to a standard TO-220; the 225 W maximum power dissipation at Tc assumes a properly sized heatsink with good thermal interface material.

These numbers are modest for a 60 V P-channel; a gate driver with 1 A peak current can switch the gate in under 50 ns, keeping crossover losses manageable in a 50-100 kHz hard-switched converter.

The P-channel polarity suits high-side load switches, battery reverse-protection circuits, and low-side P-channel drive in bridge legs where a complementary N-channel is used on the other half. The full-pack isolation is useful in metal-enclosed assemblies where the tab could short to chassis ground.

Frequently asked questions

What is the replacement for STF12PF06?

For a form-fit-function replacement, look for a P-channel MOSFET in a TO-220FP package with a 60 V or higher drain-source rating, 8 A or higher continuous drain current, and Rds(on) at or below 200 mOhm at 10 V gate drive. The STripFET™ II series has been superseded by later generations; a parametric search on 60 V P-channel TO-220FP parts from ST or equivalent suppliers is the practical path.

What is the Rds(on) of STF12PF06?

The maximum on-resistance is 200 mOhm at a drain current of 10 A with a gate-source voltage of 10 V.