STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 600 V drain-source, 10 A continuous drain, 410 mOhm Rds(on) at 5 A, TO-220 Full Pack through-hole package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 410mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 960 pF @ 50 V |
The STF12NM60N is an N-Channel MOSFET from the MDmesh™ II series, rated at 600 V drain-source and 10 A continuous drain, in a TO-220 Full Pack (TO-220FP) through-hole package.
Gate charge is 30.5 nC at 10 V; input capacitance is 960 pF at 50 V.
STMicroelectronics lists the STF12NM60N as Obsolete.
Yes, STMicroelectronics has marked the STF12NM60N as Obsolete. There is no direct replacement announced by the manufacturer.
No official replacement part number is published. A functional substitute must match the 600 V Vdss, 10 A Id, TO-220FP package, and similar Rds(on) and gate charge — a cross-reference search against the MDmesh II or MDmesh V families is the practical next step.
Submit an RFQ for current availability and pricing — no stock-holding claim is made here.