STMicroelectronics STF12N50M2, MDmesh™ II Plus series, N-channel MOSFET, 500 V Vdss, 10 A continuous drain, 380 mOhm Rds(on) at 10 V, 15 nC gate charge, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 85W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 560 pF @ 100 V |
Maximum power dissipation is 85 W at case temperature, but the junction-to-case thermal path through the epoxy back limits the practical dissipation below what a standard TO-220 with a metal tab would handle. At 150°C junction the Rds(on) roughly doubles from the 25°C value — budget the conduction loss at the hot operating point, not the room-temperature spec.
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