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STMicroelectronics STF12N50DM2 — Discrete Semiconductors

STF12N50DM2 MOSFET N-CH 500V 11A TO-220FP, MDmesh DM2

MPNSTF12N50DM2
Active

ST MDmesh™ DM2 N-Channel MOSFET, 500 Vdss, 11 A Id, TO-220FP full-pack, 350 mOhm Rds(on) @ 10 V, 16 nC Qg, -55 to 150 °C.

$2.0900Ref. price · indicative, final on quote
STMicroelectronics STF12N50DM2 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF12N50DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs350mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds628 pF @ 100 V

Product details

500 V, 11 A N-channel MOSFET in isolated TO-220FP

The STF12N50DM2 is an N-channel power MOSFET from ST's MDmesh™ DM2 series, rated for 500 V drain-to-source voltage and 11 A continuous drain current at 25 °C case temperature. That saves assembly time and keeps the thermal path consistent in offline flyback converters, PFC stages, and auxiliary power supplies where the heatsink is chassis-grounded.

At that drive voltage the channel is fully enhanced, so conduction loss in a 100 W-class flyback primary is predictable: 350 mOhm times the RMS current squared gives the I²R loss you budget for.

Temperature range and package — deployment fit

That cuts BOM cost by one part and eliminates a thermal interface joint. The 25 W power dissipation limit at case temperature is the thermal budget to work with; a heatsink sized to keep the case below 100 °C at full load leaves margin for the 150 °C junction limit.

For designs requiring a fully isolated package with a 500 V / 11 A rating in the MDmesh DM2 family, this part is a current-production choice that does not trigger a PCN review at this time.

Frequently asked questions

What are the specifications of STF12N50DM2?

It is an N-channel MOSFET rated at 500 V drain-to-source voltage, 11 A continuous drain current at 25 °C, 350 mOhm maximum on-resistance at 5.5 A and 10 V gate drive, 16 nC typical gate charge at 10 V, and a junction temperature range of -55 °C to 150 °C. It comes in a TO-220FP full-pack package.

Is STF12N50DM2 RoHS compliant?

Yes, it is ROHS3 compliant.

How does STF12N50DM2 compare to STP12N50DM2?

Both share the same die — 500 V, 11 A, 350 mOhm Rds(on), 16 nC Qg — but the STF version uses the TO-220FP full-pack with an isolated tab, while the STP version uses a standard TO-220 with a live tab. The STF saves the insulating washer and suits chassis-grounded heatsinks; the STP needs an insulator but offers slightly better thermal resistance to the heatsink.