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STMicroelectronics STF12N120K5 — Discrete Semiconductors

STF12N120K5 N-Channel MOSFET, 1200 V, 12 A, TO-220FP

MPNSTF12N120K5
Active

STMicroelectronics MDmesh™ K5 series, STF12N120K5, N-Channel MOSFET, 1200 V Vdss, 12 A Id, 690 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -55 to 150 °C.

$13.2200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF12N120K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs690mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs44.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1370 pF @ 100 V

Product details

1200 V N-channel MOSFET in the MDmesh K5 family

What the gate charge and capacitance numbers mean for the drive circuit

A gate driver capable of sourcing and sinking at least 1 A will switch the STF12N120K5 cleanly in the 50–100 kHz range. If the switching frequency pushes above 100 kHz, the gate drive losses (Qg × Vgs × fsw) start to become significant in the total power budget.

Temperature range and thermal design

The TO-220FP package has a higher junction-to-case thermal resistance than a standard TO-220 because of the plastic isolation layer — factor that into the heatsink calculation rather than assuming the same thermal performance as a non-isolated TO-220.

Frequently asked questions

What is the closest equivalent to STF12N120K5 if it is unavailable?

The STF12N120K4 is a potential cross-shop candidate from the same MDmesh K5 family, but verify the parametric differences — particularly the drain-source voltage rating and on-resistance — against your design margin before substituting.