STF12N120K5

STMicroelectronics

STMicroelectronics MDmesh™ K5 series, STF12N120K5, N-Channel MOSFET, 1200 V Vdss, 12 A Id, 690 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -55 to 150 °C.

STMicroelectronics STF12N120K5
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Technical specifications

STF12N120K5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs690mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs44.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1370 pF @ 100 V

Technical details

STF12N120K5
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