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STMicroelectronics STF120NF10 — Discrete Semiconductors

STF120NF10 STripFET II N-Channel MOSFET, 100 V, 41 A

MPNSTF120NF10
Obsolete

STMicroelectronics STripFET™ II, STF120NF10, N-Channel MOSFET, 100 V Vdss, 41 A Id, 10.5 mOhm Rds(on) at 60 A, 10 V, TO-220-3 Full Pack, through-hole, -55°C to 175°C junction.

$3.9800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF120NF10 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C41A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs10.5mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs233 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5200 pF @ 25 V

Product details

100 V, 41 A N-channel in a fully isolated TO-220FP

For a BOM line that calls out this exact MPN, the supply path runs through independent distribution — surplus factory reels, sealed tubes, or broker-sourced inventory. The TO-220FP package is common across many ST power MOSFETs, but pin-compatibility with a current-production sibling is not guaranteed without a cross-reference. When quoting this part, confirm the date-code spread and packaging condition; sealed factory tubes with consistent date-codes are the preferred lot.

Junction temperature range and deployment context

The 175°C TJ(max) makes it a candidate for under-hood automotive, engine-bay electronics, or downhole instrumentation where ambient temperatures push past 125°C. At 175°C junction, the Rds(on) roughly doubles from the 25°C value, so the 10.5 mOhm headline number is a best-case figure; budget 20 mOhm or more at high temperature for loss calculations.

Gate drive and switching considerations

This is a standard-threshold device — a 5 V logic gate will not fully enhance it; use a proper gate driver that swings to 10 V or more. Input capacitance (Ciss) is 5200 pF at 25 V Vds, which influences the driver's peak current requirement for fast turn-on edges.

Frequently asked questions

What is the replacement for STF120NF10?

No official replacement or successor order code is recorded for STF120NF10. A cross-reference search against current ST N-channel MOSFETs in TO-220FP with 100 V, 41 A, and similar Rds(on) would be needed to identify a pin-compatible alternative. We can assist with that during the RFQ process.