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STMicroelectronics STF11NM80 — Discrete Semiconductors

STF11NM80 N-Channel MOSFET, 800 V, 11 A, TO-220FP

MPNSTF11NM80
Active

STMicroelectronics MDmesh™ series, STF11NM80, N-Channel MOSFET, 800 V Vdss, 11 A Id, 400 mOhm Rds(on), TO-220-3 Full Pack, Through Hole, -65°C to 150°C.

$6.1100Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF11NM80 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation35W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs400mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs43.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1630 pF @ 25 V

Product details

800 V, 11 A N-channel in an isolated TO-220

It comes in a TO-220 Full Pack (TO-220FP) through-hole package, which provides electrical isolation between the tab and the heatsink — no insulating washer needed, simplifying assembly in offline power supplies and converters.

This is the figure the BOM engineer uses to size the heatsink: at 5.5 A the I²R loss hits about 12 W, which against the 35 W power dissipation ceiling leaves margin for switching losses.

Total gate charge is 43.6 nC at 10 V, with an input capacitance of 1630 pF at 25 V drain-source. This moderate Qg keeps the gate-driver current requirement manageable — a 1 A driver can switch the gate in about 44 ns, which suits hard-switched topologies like flyback and PFC stages up to roughly 100 kHz. The threshold voltage is 5 V max at 250 µA, so a 10 V gate drive provides a solid overdrive margin.

Frequently asked questions

Is the STF11NM80 a replacement for the IRF840?

The STF11NM80 is not a direct pin-compatible drop-in for the IRF840 — the IRF840 typically comes in a standard TO-220 (non-isolated) package, while the STF11NM80 uses the TO-220 Full Pack with an isolated tab. The electrical ratings differ as well: the STF11NM80 is an 800 V, 11 A device with 400 mOhm Rds(on), whereas the IRF840 is a 500 V, 8 A part with 0.85 Ohm Rds(on). For a new design targeting 800 V, the STF11NM80 is a viable candidate; for a retrofit, verify the package isolation and mounting hole pattern.

What is the Rds(on) of the STF11NM80?

The typical value from the description is 0.35 Ohm.