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STMicroelectronics STF11NM65N — Discrete Semiconductors

STF11NM65N N-Channel MOSFET, 650 V, 11 A, TO-220FP

MPNSTF11NM65N
Obsolete

STMicroelectronics MDmesh™ II, N-Channel MOSFET, 650 V drain-to-source voltage, 11 A continuous drain current, 455 mOhm on-resistance at 10 V gate drive, TO-220-3 Full Pack through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF11NM65N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs455mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 50 V

Product details

This is not a NRND or phase-out notice — production has ended. For a production BOM that currently specifies this part, the window for last-time-buy orders has closed through official channels. Sourcing now runs through independent distribution, where remaining inventory is finite and date-code provenance becomes the critical check.

650 V, 11 A — the power-stage fit

Its 650 V drain-to-source voltage rating and 11 A continuous drain current place it in offline flyback converters, auxiliary power supplies, and PFC stages where the bus voltage sits at 380 VDC or below with derating margin.

The gate charge is 29 nC at 10 V, and the input capacitance measures 800 pF at 50 V Vds. The ±25 V maximum gate-to-source rating gives headroom for ringing on the gate node in a hard-switched topology. The 4 V gate threshold at 250 µA is typical for a standard-threshold MDmesh device — ensure the PWM controller's gate drive output swings to at least 10 V to achieve the specified Rds(on).

This is a fully molded, isolated package — the metal tab is encased in epoxy, so the device can be mounted directly to a chassis or heatsink without an insulating pad. The through-hole leads suit wave-soldering or manual assembly.

Frequently asked questions

Is STF11NM65N obsolete?

Yes, the STF11NM65N is listed as Obsolete by STMicroelectronics. Production has ended, and no further last-time-buy orders are available through the manufacturer.

What is the replacement for STF11NM65N?

The evidence does not list an official successor or cross-reference for the STF11NM65N. For a pin-compatible replacement in the same MDmesh series, a parametric search on 650 V N-channel MOSFETs in TO-220FP package with similar Rds(on) and current rating would identify candidates. Contact our sourcing desk with your quantity and target price, and we can propose qualified alternatives from current-production lines.

What are the specifications of STF11NM65N?

Gate charge is 29 nC at 10 V, input capacitance is 800 pF at 50 V. It comes in a TO-220FP full-pack through-hole package and operates up to 150 °C junction temperature.