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STMicroelectronics STF11NM60ND — Discrete Semiconductors

STMicroelectronics STF11NM60ND N-Channel MOSFET

MPNSTF11NM60ND
Active

STMicroelectronics FDmesh™ II N-Channel MOSFET, STF11NM60ND, 600V Vdss, 10A Id, 450mOhm Rds(on), TO-220 Full Pack, Tube.

$4.2500Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesFDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF11NM60ND specifications
ParameterValue
SeriesFDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds850 pF @ 50 V

Product details

Active production — what it means for the BOM line

The STF11NM60ND: ROHS3 compliant — no lead or restricted-substance exemptions to track across date-code lots.

600 V, 10 A, 450 mOhm — sizing the conduction and switching loss

Rated 600 V drain-to-source (Vdss) and 10 A continuous drain current at 25°C case temperature — this sets the bus-voltage ceiling for offline flyback, PFC boost, or bridge topologies and the load current budget before the junction-temperature derating curve applies. Maximum on-resistance is 450 mOhm at 5 A drain current with 10 V gate drive — the conduction loss at full load is I² × R, so at 5 A the dissipation is about 11.25 W, well within the 25 W package limit at 25°C case. Gate charge totals 30 nC at 10 V, and input capacitance is 850 pF at 50 V drain — these numbers drive the gate-driver sizing: a driver sourcing 1 A charges the gate in roughly 30 ns, but the practical switching speed is also limited by the 850 pF input capacitance and the gate-loop inductance.

TO-220 Full Pack — isolated tab, no heatsink pad needed

The TO-220 Full Pack (TO-220FP) package has the metal tab fully encapsulated in epoxy — the tab is electrically isolated, so no insulating pad or mica washer is needed between the device and the heatsink, though the thermal resistance junction-to-case is higher than a standard TO-220. Through-hole mounting suits point-to-point wiring or PCB layouts where the 2.54 mm pitch lead frame is standard — the three leads are gate, drain, and source, with the drain on the centre pin. Junction temperature range spans -55°C to 150°C, covering industrial motor-drive environments and some under-hood automotive applications where the ambient stays below 125°C.

FDmesh™ II — fast-recovery body diode for bridge topologies

The FDmesh™ II series integrates a fast-recovery body diode — this reduces reverse-recovery charge (Qrr) compared to a standard MOSFET body diode, making it suited for half-bridge, full-bridge, and LLC resonant converters where the diode conducts during dead-time. Gate threshold voltage is 5 V maximum at 250 µA drain current — the 10 V drive voltage for minimum Rds(on) is well above the threshold, ensuring full enhancement across the operating temperature range.

Frequently asked questions

What is the closest functional alternative to STF11NM60ND?

The STF11N60M2-EP is a close peer in the same TO-220FP package and 600 V class, but it uses the MDmesh™ M2-EP technology with a higher 595 mOhm Rds(on) at 3.75 A and a lower 12.4 nC gate charge — the trade-off is higher conduction loss for lower switching loss. The STF13N60M2 (MDmesh™ II Plus) offers 380 mOhm at 5.5 A and 17 nC gate charge, which reduces conduction loss at the cost of slightly higher gate drive power. Neither is a drop-in replacement without verifying the gate-drive and thermal margin in the specific application.