STF11NM60ND

STMicroelectronics · FDmesh™ II Series

STMicroelectronics FDmesh™ II N-Channel MOSFET, STF11NM60ND, 600V Vdss, 10A Id, 450mOhm Rds(on), TO-220 Full Pack, Tube.

STMicroelectronics STF11NM60ND
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Technical specifications

STF11NM60ND specifications
Parameter / AttributeSpecification / Value
SeriesFDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds850 pF @ 50 V

Technical details

Active production — what it means for the BOM line

The STF11NM60ND: ROHS3 compliant — no lead or restricted-substance exemptions to track across date-code lots.

600 V, 10 A, 450 mOhm — sizing the conduction and switching loss

Rated 600 V drain-to-source (Vdss) and 10 A continuous drain current at 25°C case temperature — this sets the bus-voltage ceiling for offline flyback, PFC boost, or bridge topologies and the load current budget before the junction-temperature derating curve applies. Maximum on-resistance is 450 mOhm at 5 A drain current with 10 V gate drive — the conduction loss at full load is I² × R, so at 5 A the dissipation is about 11.25 W, well within the 25 W package limit at 25°C case. Gate charge totals 30 nC at 10 V, and input capacitance is 850 pF at 50 V drain — these numbers drive the gate-driver sizing: a driver sourcing 1 A charges the gate in roughly 30 ns, but the practical switching speed is also limited by the 850 pF input capacitance and the gate-loop inductance.

TO-220 Full Pack — isolated tab, no heatsink pad needed

The TO-220 Full Pack (TO-220FP) package has the metal tab fully encapsulated in epoxy — the tab is electrically isolated, so no insulating pad or mica washer is needed between the device and the heatsink, though the thermal resistance junction-to-case is higher than a standard TO-220. Through-hole mounting suits point-to-point wiring or PCB layouts where the 2.54 mm pitch lead frame is standard — the three leads are gate, drain, and source, with the drain on the centre pin. Junction temperature range spans -55°C to 150°C, covering industrial motor-drive environments and some under-hood automotive applications where the ambient stays below 125°C.

FDmesh™ II — fast-recovery body diode for bridge topologies

The FDmesh™ II series integrates a fast-recovery body diode — this reduces reverse-recovery charge (Qrr) compared to a standard MOSFET body diode, making it suited for half-bridge, full-bridge, and LLC resonant converters where the diode conducts during dead-time. Gate threshold voltage is 5 V maximum at 250 µA drain current — the 10 V drive voltage for minimum Rds(on) is well above the threshold, ensuring full enhancement across the operating temperature range.

STF11NM60ND
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