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STMicroelectronics STF11NM60N — Discrete Semiconductors

STF11NM60N MOSFET, 600 V N-Channel, 10 A, TO-220FP

MPNSTF11NM60N
Obsolete

STMicroelectronics MDmesh™ II N-channel MOSFET, STF11NM60N, 600 V drain-source voltage, 10 A continuous drain current, 450 mOhm Rds(on) at 10 V gate drive, TO-220FP through-hole package, 150°C junction temperature.

$3.5800Ref. price · indicative, final on quote
STMicroelectronics STF11NM60N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF11NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds850 pF @ 50 V

Product details

600 V / 10 A — what this FET was designed for

Gate charge and capacitance — the switching budget

With a typical gate charge of 31 nC at 10 V and an input capacitance of 850 pF at 50 V drain bias, this FET is moderate-speed — not a fast-switching GaN competitor, but well within the range for 50-150 kHz hard-switched flyback and PFC stages. The 4 V typical gate threshold (max 4 V at 250 µA) means a standard 10 V gate drive is needed to hit the rated Rds(on); a 5 V logic-level drive will leave significant on-resistance margin unutilized.

The STF11NM60N lifecycle status is Obsolete. New-production units are not available from the factory. Sourcing is limited to verified inventory held by independent distributors.

Frequently asked questions

Is STF11NM60N obsolete?

Yes, the STF11NM60N is listed as Obsolete. STMicroelectronics no longer manufactures this part. Any procurement goes through surplus or broker channels.