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STMicroelectronics STF11NM50N — Discrete Semiconductors

STF11NM50N N-Channel MOSFET, 500V 8.5A TO-220FP

MPNSTF11NM50N
Active

STMicroelectronics STF11NM50N, MDmesh™ II, N-Channel MOSFET, 500V Vdss, 8.5A Id, 470mOhm Rds(on), 19nC Qg, TO-220FP through-hole package.

$1.4768Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF11NM50N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.5A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs470mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds547 pF @ 50 V

Product details

Through-hole full-pack — no extra isolation hardware

That saves assembly time and one BOM line in through-hole power stages.

470 mOhm on-resistance and 19 nC gate charge

That conduction loss at 4.5 A is under 10 W — the 25 W package limit at Tc gives headroom for a 70–80 °C case temperature in a ventilated enclosure. Gate charge totals 19 nC at 10 V. Input capacitance is 547 pF at 50 V drain-source. That keeps the Miller plateau narrow and the switching edges clean enough for most offline converters without aggressive gate resistors.

Frequently asked questions

What is the closest pin-compatible alternative to STF11NM50N in the MDmesh II family?

Within the same MDmesh II series, the STF11NM50N is the base 500 V, 8.5 A variant. For a drop-in alternate, confirm the gate threshold and Rds(on) match your thermal budget.