STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, 650 V Vdss, 11 A continuous drain (Tc), 850 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through-hole, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 35W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 850mOhm @ 3.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 42 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1180 pF @ 50 V |
The STF11N65K3 is a 650 V, 11 A N-channel power MOSFET from ST's SuperMESH3™ series, housed in a TO-220 Full Pack (TO-220FP) through-hole package.
The 42 nC total gate charge at 10 V and 1180 pF input capacitance at 50 V drain are moderate numbers; a typical gate-driver IC with 1 A to 2 A peak current will switch this device cleanly in the 50–150 kHz range without excessive cross-conduction.
ST has not published an official successor order code for the STF11N65K3. For a new design, search ST's current SuperMESH3 or MDmesh series for a 650 V, 11 A N-channel MOSFET in TO-220FP with similar Rds(on) and gate charge. For an existing BOM, we can help identify a drop-in alternate through our cross-reference database — submit an RFQ with your volume and target price.