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STMicroelectronics STF11N60M2-EP — Discrete Semiconductors

STF11N60M2-EP MOSFET, N-Ch 600V 7.5A TO-220FP

MPNSTF11N60M2-EP
Active

STMicroelectronics MDmesh™ M2-EP series, N-Channel MOSFET, 600V Vdss, 7.5A Id at 25°C, 595mOhm Rds(on) at 10V, TO-220-3 Full Pack (TO-220FP), Through Hole, -55°C to 150°C junction temperature.

$1.7000Ref. price · indicative, final on quote
STMicroelectronics STF11N60M2-EP datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ M2-EP
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF11N60M2-EP specifications
ParameterValue
SeriesMDmesh™ M2-EP
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.5A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs595mOhm @ 3.75A, 10V
Gate charge (Qg) (Max) @ vgs12.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds390 pF @ 100 V

Product details

STF11N60M2-EP gate charge is 12.4 nC at 10 V, keeping drive requirements modest for a 600 V device. Input capacitance is 390 pF at 100 V drain-source. That saves assembly time and removes one thermal interface from the path. The junction-to-case thermal resistance is baked into the 25 W power dissipation limit at the case.

The base product number is STF11, which covers the 600 V die in the TO-220FP package. The -EP suffix indicates the enhanced-performance variant within the M2-EP generation.

Junction temperature range and the field environment

The 150°C max junction gives headroom for overload transients, but the 25 W dissipation limit at the case means the heatsink design is the real constraint — derate above 25°C case per the datasheet curve. The gate is rated to ±25 V absolute maximum, which gives margin against ringing in a hard-switched topology — but keep the drive voltage at 10 V to stay inside the safe operating area.

Frequently asked questions

What is the Rds(on) of STF11N60M2-EP at 10V?

That is the worst-case figure at 25°C junction temperature — actual Rds(on) will be lower in the typical part, and it rises with junction temperature per the normalised curve in the datasheet.

What is the equivalent or replacement for STF11N60M2-EP?

No official pin-compatible replacement or second-source cross-reference is listed for this exact -EP suffix variant. The base MDmesh M2 series includes other 600 V, 7.5 A TO-220FP parts with slightly different Rds(on) and gate charge — but those are not drop-in equivalents without checking the parametric trade-offs. For dual-sourcing, compare the Rds(on) and Qg specs against the M2-EP values.

Does STF11N60M2-EP require a heatsink?

At 7.5 A continuous drain current and 595 mOhm Rds(on), conduction losses alone exceed 30 W — well above the 25 W maximum power dissipation at the case. So yes, in any practical continuous-load application it needs a heatsink. The TO-220FP's isolated tab lets you bolt it directly to the heatsink without an insulating pad.