600 V, 8 A N-channel in a full-pack TO-220
This is a switching MOSFET aimed at offline power supplies, flyback converters, PFC stages, and lighting ballasts where 600 V blocking margin and moderate current (8 A) are the design targets. The full-pack construction keeps the heatsink at ground potential, simplifying layout and reducing EMI coupling through the mounting hardware.
That is the conduction loss figure for the typical operating point in a 150–300 W flyback or a two-switch forward converter. At 8 A the Rds(on) will be higher — the 550 mOhm is a 4 A reference, not the full-rated current value. The low Qg also keeps the gate drive loss small in high-frequency designs — a meaningful advantage over older 600 V planar FETs that carried 40–60 nC. Input capacitance is 540 pF at 50 V drain-source. That number drives the turn-on delay and the Miller plateau duration.
25 W power dissipation — the full-pack trade-off
The TO-220FP package limits maximum power dissipation to 25 W at case temperature. That is about half what a standard TO-220 with a metal tab can handle, because the plastic full-pack body has higher thermal resistance. For a 600 V 8 A MOSFET, 25 W means the practical continuous current in a real heatsink is well below 8 A — budget 3–4 A in a 50 °C ambient with a modest extruded heatsink. The junction temperature range is -55 to 150 °C, which covers industrial and some automotive under-hood environments. The full-pack case does not change the die temperature limits — it changes how fast heat leaves the die. A thermal pad or grease between the full-pack back and the heatsink is still required; the flat plastic surface needs good contact pressure.
ROHS3 compliant. The FDmesh™ II series is a mature, stable line; no successor has been announced, and the part is available through franchised distribution as well as independent channels. The active status means no last-time-buy scheduling, no premium for end-of-life stock.