600 V, 10 A N-channel — what the MDmesh II structure delivers
STF10NM60N is an N-channel 600 V, 10 A MOSFET in the TO-220 Full Pack (TO-220FP) through-hole package.
Conduction loss and switching — sizing the gate drive
On-resistance is 550 mOhm maximum at 4 A, 10 V. Gate charge is 19 nC at 10 V. Input capacitance is 540 pF at 50 V drain-source, which keeps the Miller plateau short and helps the device turn on and off cleanly.
In a real design with a heatsink, the actual dissipation limit is set by the junction-to-case thermal resistance and the ambient temperature. The TO-220FP's full-plastic construction means the thermal path is through the back of the package, not a metal tab; expect higher thermal resistance than a standard TO-220, so the heatsink needs to be sized accordingly.