STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 500 V Drain-Source, 7 A Continuous Drain @ 25°C, 630mOhm Rds(on) @ 3.5A/10V, 17nC Gate Charge, TO-220-3 Full Pack Through Hole, -55°C to 150°C Junction.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 630mOhm @ 3.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 450 pF @ 50 V |
The STF10NM50N: The TO-220 Full Pack isolates the back of the package — no mica washer needed when bolting to a grounded chassis.
Gate charge is 17 nC at 10 V. Input capacitance is 450 pF at 50 V drain bias.
ST lists the STF10NM50N as obsolete. Sourcing now runs through independent distribution — we can quote it against an RFQ from our inventory and broker network.
The STF10NM50N is obsolete from the factory, but we source it through independent distribution. Submit an RFQ — we will confirm availability and current pricing at quote time.
Yes, ST lists the STF10NM50N as obsolete. There is no active factory last-time-buy window, so procurement goes through surplus and broker channels.
ST does not list a direct successor for the STF10NM50N. For new designs, evaluate a current MDmesh series part like the STF10N60M2 in the same TO-220FP package — verify gate drive and Rds(on) against your load conditions.