Gate charge and switching — driver sizing
The STF10NK50Z: Total gate charge is 39.2 nC at 10 V. Input capacitance is 1219 pF at 25 V drain-source.
Obsolete — sourcing the BOM line
STMicroelectronics lists the STF10NK50Z as obsolete.

STMicroelectronics SuperMESH N-Channel MOSFET, 500 V drain-source, 9 A continuous drain, 700 mOhm Rds(on) at 10 V gate drive, TO-220 Full Pack, -55 to 150 °C junction.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 700mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 39.2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1219 pF @ 25 V |
The STF10NK50Z: Total gate charge is 39.2 nC at 10 V. Input capacitance is 1219 pF at 25 V drain-source.
STMicroelectronics lists the STF10NK50Z as obsolete.
Yes, STMicroelectronics has marked the STF10NK50Z as obsolete. No official replacement part number is listed.
Maximum on-resistance is 700 mOhm at 4.5 A drain current with 10 V gate-to-source voltage.
Through-hole TO-220-3 Full Pack, also designated as TO-220FP in the supplier device package field. The full-pack moulding isolates the tab electrically, so no insulating washer is needed between the device and the heatsink.