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STMicroelectronics STF10NK50Z — Discrete Semiconductors

STF10NK50Z N-Channel MOSFET, 500 V, 9 A, TO-220FP, Obsolete

MPNSTF10NK50Z
Obsolete

STMicroelectronics SuperMESH N-Channel MOSFET, 500 V drain-source, 9 A continuous drain, 700 mOhm Rds(on) at 10 V gate drive, TO-220 Full Pack, -55 to 150 °C junction.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF10NK50Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs700mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs39.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1219 pF @ 25 V

Product details

Gate charge and switching — driver sizing

The STF10NK50Z: Total gate charge is 39.2 nC at 10 V. Input capacitance is 1219 pF at 25 V drain-source.

Obsolete — sourcing the BOM line

STMicroelectronics lists the STF10NK50Z as obsolete.

Frequently asked questions

Is STF10NK50Z obsolete?

Yes, STMicroelectronics has marked the STF10NK50Z as obsolete. No official replacement part number is listed.

What is the Rds(on) of STF10NK50Z?

Maximum on-resistance is 700 mOhm at 4.5 A drain current with 10 V gate-to-source voltage.

What package is STF10NK50Z?

Through-hole TO-220-3 Full Pack, also designated as TO-220FP in the supplier device package field. The full-pack moulding isolates the tab electrically, so no insulating washer is needed between the device and the heatsink.