950 V N-channel in a TO-220FP full-pack
The STF10N95K5 is an N-channel MOSFET from STMicroelectronics' SuperMESH5™ series, rated for a drain-to-source voltage of 950 V and a continuous drain current of 8 A at 25 °C case temperature. The 800 mOhm maximum on-resistance at 4 A and 10 V gate drive defines the conduction loss for a given load — at 4 A the dissipation is roughly 12.8 W, which the 30 W power-dissipation ceiling at the case can handle with a modest heatsink. The TO-220FP full-pack package (TO-220-3) is fully isolated — the backside tab carries no electrical potential, so the MOSFET can be bolted directly to a grounded heatsink or chassis without an insulating pad. This simplifies assembly in offline power supplies and lighting ballasts where the drain sits at a high voltage.
Gate charge and switching loss budget
A total gate charge of 22 nC at 10 V means the gate driver must supply 22 nC per switching cycle. For a 100 kHz converter, the average gate-drive current is 2.2 mA — within the capability of most driver ICs, but the peak current during the Miller plateau determines the switching time and crossover loss. The input capacitance of 630 pF at 100 V drain-source sets the capacitive load the driver sees during the turn-on delay. The 5 V gate-threshold maximum at 100 µA drain current is a standard logic-level threshold — a 10 V gate drive is recommended for the lowest Rds(on), but the MOSFET starts conducting well below that. The ±30 V maximum gate-source rating gives headroom for gate-drive overshoot in hard-switching topologies.
Active production, ROHS3, and sourcing
Sourced through independent distribution channels; availability and current pricing are confirmed at RFQ against the BOM quantity. No pin-compatible second-source is listed on the official record, but the TO-220FP footprint is a standard industry outline — a parametric search for 950 V, 8 A, TO-220FP N-channel MOSFETs from other vendors may yield drop-in alternatives for a dual-source strategy.