Skip to main content
Log in
STMicroelectronics STF10N65K3 — Discrete Semiconductors

STF10N65K3 N-Channel MOSFET, 650 V, 10 A, SuperMESH3™

MPNSTF10N65K3
Active

STMicroelectronics SuperMESH3™, STF10N65K3, N-Channel MOSFET, 650 V Vdss, 10 A Id, 1 Ohm Rds(on) @ 3.6 A, 10 V, 42 nC Qg, TO-220-3 Full Pack, -55°C to 150°C.

$1.8200Ref. price · indicative, final on quote
STMicroelectronics STF10N65K3 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH3™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF10N65K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs1Ohm @ 3.6A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1180 pF @ 25 V

Product details

650 V N-channel MOSFET in TO-220FP — SuperMESH3™

The STMicroelectronics STF10N65K3 is an N-channel power MOSFET from the SuperMESH3™ series, rated for 650 V drain-to-source voltage and 10 A continuous drain current at 25°C. It comes in a TO-220-3 Full Pack (TO-220FP) package, which provides electrical isolation between the tab and the heatsink — no insulating pad needed during assembly. The device targets high-voltage switching applications such as offline power supplies, adapters, and lighting ballasts where the 650 V breakdown margin handles rectified mains with headroom for transients.

With a maximum on-resistance of 1 Ohm at 3.6 A and 10 V gate drive, the STF10N65K3 sits in a moderate Rds(on) tier for a 650 V device. Conduction loss at full load will be noticeable — plan heatsinking accordingly, especially given the 35 W maximum power dissipation.

Temperature range and package — field-fit notes

The TO-220FP full-pack construction means the metal tab is electrically isolated — a practical advantage in high-voltage designs where a common heatsink is shared across multiple devices. No mica washer or sil-pad needed, which saves assembly time and improves thermal contact consistency.

Frequently asked questions

How does STF10N65K3 compare to STF10N60?

The STF10N65K3 is rated for 650 V drain-to-source voltage, while the STF10N60 is a 600 V part. The 50 V higher breakdown margin on the STF10N65K3 provides additional headroom for designs with higher mains transients or where derating is required. Both parts share the same TO-220FP package and 10 A current rating, making them footprint-compatible for a drop-in voltage upgrade.

Is STF10N65K3 suitable for high voltage switching?

Yes, with a 650 V Vdss rating and 10 A continuous drain current, the STF10N65K3 is designed for high-voltage switching applications such as offline power supplies, adapters, and lighting ballasts. The 1 Ohm Rds(on) and 42 nC gate charge support moderate-frequency hard-switched topologies.