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STMicroelectronics STF100N6F7 — Discrete Semiconductors

STF100N6F7 N-Channel MOSFET, 60 V, 46 A, 5.6 mOhm, TO-220FP

MPNSTF100N6F7
Active

STMicroelectronics STripFET F7 N-channel MOSFET, 60 V drain-source, 46 A continuous drain, 5.6 mOhm Rds(on) max at 23 A, 10 V gate drive, 30 nC gate charge, TO-220FP through-hole package, -55 to 175 °C junction temperature.

$1.7600Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSTripFET™ F7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF100N6F7 specifications
ParameterValue
SeriesSTripFET™ F7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C46A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5.6mOhm @ 23A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1980 pF @ 25 V

Product details

STF100N6F7 N-channel MOSFET, 60 V Vdss, 46 A continuous drain, 5.6 mOhm Rds(on) max at 23 A, 10 V gate drive.

175 °C junction — thermal headroom for harsh environments

The TO-220FP full-pack package isolates the tab electrically, so no mica washer or thermal grease is needed against the heatsink — the back of the package is the mounting face, and the 25 W power dissipation rating assumes a properly sized heatsink at 25 °C case temperature.

Frequently asked questions

Is STF100N6F7 RoHS compliant?

Yes, the STF100N6F7 is ROHS3 compliant.

What is the difference between STF100N6F7 and STP100N6F7?

The STF100N6F7 comes in a TO-220FP full-pack (fully isolated) package, while the STP100N6F7 uses a standard TO-220 package with a non-isolated tab. The STF variant eliminates the need for an insulating washer and thermal grease when mounting to a heatsink.