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STMicroelectronics STF100N10F7 — Discrete Semiconductors

STF100N10F7 N-Channel MOSFET, 100V 45A TO-220FP

MPNSTF100N10F7
Active

STMicroelectronics DeepGATE™, STripFET™ VII N-Channel MOSFET, STF100N10F7, 100V Vdss, 45A Id, 8mOhm Rds(on), TO-220-3 Full Pack, Through Hole, Tube.

$2.6000Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesDeepGATE™, STripFET™ VII
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF100N10F7 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C45A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 22.5A, 10V
Gate charge (Qg) (Max) @ vgs61 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4369 pF @ 50 V

Product details

100V, 45A N-channel in a full-pack TO-220

The STF100N10F7 is an N-channel MOSFET from STMicroelectronics' DeepGATE™ and STripFET™ VII series, rated for 100 V drain-to-source voltage and 45 A continuous drain current at 25°C case temperature. The 8 mOhm maximum on-resistance at 22.5 A and 10 V gate drive sets the conduction loss floor — at 45 A the I²R loss is about 16 W, which the 30 W maximum dissipation budget must cover with adequate heatsinking. The TO-220FP full-pack package isolates the tab electrically, so the MOSFET can be bolted directly to a grounded heatsink without an insulating pad — a practical advantage in high-side switching or multi-device layouts where parasitic capacitance to ground matters.

Gate drive and switching budget

Total gate charge is 61 nC at 10 V — a 1 A gate driver charges the gate in about 61 ns, but the 4369 pF input capacitance at 50 V drain bias means the Miller plateau stretches the switching interval; the effective switching loss depends on the driver's peak current and the gate loop inductance. The gate threshold voltage is 4.5 V maximum at 250 µA drain current, and the recommended drive voltage for minimum Rds(on) is 10 V — a 5 V logic-level gate drive will not fully enhance the channel, so a 10 V rail or a dedicated gate driver is needed for rated performance. Maximum gate-to-source voltage is ±20 V — the gate oxide breakdown margin is tight if the driver overshoots; a series gate resistor or a 15 V Zener clamp between gate and source protects against ringing in a hard-switched converter.

Thermal limits and operating range

The junction temperature range spans -55°C to 175°C, covering industrial and automotive under-hood environments — the 175°C absolute maximum allows headroom for transient overloads, but continuous operation above 150°C accelerates electromigration in the aluminum metallization. Maximum power dissipation is 30 W at case temperature 25°C — the TO-220FP's junction-to-case thermal resistance is about 5°C/W, so a 30 W load raises the junction 150°C above the case; a heatsink with 3°C/W or better keeps the junction below 175°C at full rated current.

Frequently asked questions

What is the difference between STF100N10F7 and STF100N6F7?

The STF100N10F7 is rated for 100 V drain-to-source voltage, while the STF100N6F7 is a 60 V device. The 100 V part has a higher Rds(on) at 8 mOhm vs 5.6 mOhm, and a higher gate charge at 61 nC vs 30 nC. Both share the same TO-220FP package and pinout, so they are footprint-compatible — the choice depends on whether the circuit's maximum drain voltage is 60 V or 100 V.

What package does the STF100N10F7 come in?

The STF100N10F7 is supplied in a TO-220-3 Full Pack (TO-220FP) through-hole package, shipped in tubes. The full-pack construction isolates the metal tab, allowing direct mounting to a heatsink without an insulating washer.