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STMicroelectronics STDLED627 — Discrete Semiconductors

STMicroelectronics STDLED627 N-Channel MOSFET, 620 V, 7 A

MPNSTDLED627
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STMicroelectronics STDLED627 N-Channel MOSFET, 620 V drain-to-source voltage, 7 A continuous drain current, 1.2 Ohm Rds(on) max at 10 V gate drive, DPAK surface-mount package, Tape & Reel.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STDLED627 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation90W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.2Ohm @ 2.8A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds890 pF @ 50 V

Product details

It comes in a DPAK (TO-252-3) surface-mount package, shipped on Tape & Reel.

At 10 V gate drive the STDLED627 guarantees a maximum on-resistance of 1.2 Ohm with 2.8 A drain current. That is the number to use for worst-case conduction loss when sizing the heatsink. Input capacitance is 890 pF at 50 V drain-to-source, which keeps the switching losses manageable in a 50–100 kHz flyback or PFC stage.

The 7 A continuous drain current is rated at a case temperature of 25°C. In a real enclosure with a 90 W maximum power dissipation budget, you will derate that current significantly unless you bolt the DPAK tab to a decent heatsink or a large copper pour. The junction temperature rating is 150°C, so the thermal design must keep the junction below that under worst-case load and ambient.

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