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STMicroelectronics STDLED625H — Discrete Semiconductors

STMicroelectronics STDLED625H N-Channel MOSFET, 620 V, 4.5 A

MPNSTDLED625H
Obsolete

STMicroelectronics STDLED625H N-Channel MOSFET, 620 V drain-source, 4.5 A continuous drain at 25°C, 2 Ohm Rds(on) at 10 V gate drive, DPAK (TO-252) surface-mount package.

$1.4800Ref. price · indicative, final on quote
STMicroelectronics STDLED625H datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STDLED625H specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.5A (Tc)
Power dissipation70W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs2Ohm @ 1.9A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds560 pF @ 50 V

Product details

620 V N-Channel MOSFET in DPAK — what it was designed for

The DPAK (TO-252) package keeps the footprint compact while the tab carries the drain connection for heatsinking through the PCB copper.

The 620 V Vdss gives a comfortable margin for universal-input (85–265 VAC) offline converters after derating for leakage inductance spikes; a 600 V device would be marginal in the same spot. The 4.5 A continuous rating at case temperature 25°C is the headline number, but at a realistic 85°C ambient the current must be derated per the thermal curve — the 70 W package limit (Tc) is the real constraint. Gate charge of 23 nC at 10 V is modest, keeping switching losses manageable for a 620 V device in the 50–100 kHz range. Input capacitance of 560 pF at 50 V drain-source is low enough that the gate driver does not need a high peak current — a standard totem-pole driver suffices.

Obsolete — sourcing and replacement strategy

For new designs, a parametric search for a 620 V N-channel MOSFET in DPAK with similar Rds(on) and gate charge is the practical path.

Frequently asked questions

Is STDLED625H obsolete?

Yes, the STDLED625H carries an Obsolete lifecycle status.

What is the equivalent replacement for STDLED625H?

A parametric search for a 620 V N-channel MOSFET in DPAK with similar Rds(on) and gate charge is recommended for a form-fit-function replacement.

What is the Vgs threshold of STDLED625H?

The maximum gate threshold voltage is 4.5 V at 50 µA drain current. This is a standard-threshold device requiring a 10 V gate drive for full enhancement.