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STMicroelectronics STDLED623 — Discrete Semiconductors

STMicroelectronics STDLED623 N-Channel MOSFET, 620 V, 3 A

MPNSTDLED623
Active

STMicroelectronics STDLED623 N-Channel MOSFET, 620 V drain-source, 3 A continuous drain, 3.6 Ohm Rds(on) at 10 V, 15.5 nC gate charge, DPAK surface-mount package, active lifecycle.

STMicroelectronics STDLED623 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STDLED623 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation45W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs3.6Ohm @ 1.1A, 10V
Gate charge (Qg) (Max) @ vgs15.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds350 pF @ 50 V

Product details

It's built for offline LED lighting ballasts and similar 50/60 Hz line-powered switching applications where the 620 V breakdown gives comfortable margin above a 400 V DC bus.

With a total gate charge of 15.5 nC at 10 V and input capacitance of 350 pF at 50 V drain-source, this MOSFET switches fast enough for a typical 50–100 kHz LED driver without excessive gate-drive losses. The 4.5 V threshold at 50 µA means it's fully enhanced with a standard 10 V gate drive; a logic-level 5 V signal won't reliably turn it on hard — budget a gate-driver IC or a bootstrap rail if your controller output is 5 V only.

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