STMicroelectronics STDLED524 N-Channel MOSFET, 525 V Vdss, 4 A continuous drain, 2.6 Ohm Rds(on) at 2.2 A, 10 V, DPAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 525 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 2.6Ohm @ 2.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 340 pF @ 100 V |
The 150°C maximum junction allows headroom for self-heating in a compact DPAK footprint.
Supplied in Tape & Reel for automated assembly, the DPAK (TO-252) package has a metal tab on the top for heatsinking — the tab is the drain. The surface-mount footprint is standard for medium-power MOSFETs; the tab should be soldered to a copper pour on the PCB to spread heat.
The maximum Rds(on) is 2.6 Ohm at 2.2 A drain current with 10 V gate drive. This is the spec to use for worst-case conduction loss calculations.