STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 600 Vdss, 6.5 A continuous drain (Tc), 745 mΩ Rds(on) at 10 V, DPAK surface-mount package, 70 W power dissipation, active lifecycle.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.5A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 745mOhm @ 3.25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 452 pF @ 50 V |
The STD9NM60N: The DPAK (TO-252) surface-mount package is used for this N-Channel MOSFET.
The DPAK (TO-252) is a surface-mount package with a large exposed tab for thermal conduction.
The maximum Rds(on) is 745 mΩ at 10 V gate drive with a drain current of 3.25 A.