The STD9N80K5 is an 800 V N-channel MOSFET from STMicroelectronics' MDmesh™ K5 series, built for high-voltage switching in a compact DPAK (TO-252) surface-mount package.
Thermal and switching — sizing the heatsink and the driver
Gate charge is 12 nC at 10 V. Input capacitance is 340 pF at 100 V drain-source.
Temperature range and gate drive
Gate threshold voltage is 5 V maximum at 100 µA drain current, so the 10 V drive recommended for minimum Rds(on) is well above the threshold — no risk of operating in the linear region at turn-on. Maximum gate-source voltage is ±30 V, giving margin against ringing on the gate node in a hard-switched topology.
