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STMicroelectronics STD9N65M2 — Discrete Semiconductors

STD9N65M2 MOSFET N-Ch 650V 5A DPAK MDmesh™

MPNSTD9N65M2
Active

STMicroelectronics MDmesh™, STD9N65M2, N-Channel MOSFET, 650V Vdss, 5A Id, 900mOhm Rds(on), 10nC Qg, DPAK (TO-252), 150°C Tj, ROHS3.

$1.5700Ref. price · indicative, final on quote
STMicroelectronics STD9N65M2 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD9N65M2 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation60W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs900mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds315 pF @ 100 V

Product details

650 V N-channel for offline flyback and PFC stages

The STD9N65M2: This N-channel MOSFET is rated for 650 V drain-source and 5 A continuous drain current.

Gate charge and switching behaviour

A 5 V gate signal leaves the channel partially enhanced and the on-resistance significantly higher than the datasheet maximum.

DPAK thermal and footprint considerations

The TO-252 (DPAK) package with exposed drain tab requires a copper landing pad on the PCB — the tab is the primary heat path. Surface-mount assembly with standard reflow profile; the tab solder joint carries no current but must be void-free for thermal transfer.

Frequently asked questions

Is STD9N65M2 a logic-level MOSFET?

No — the maximum gate threshold is 4 V at 250 µA, and the drive voltage for rated Rds(on) is 10 V. This is a standard-threshold device; a 5 V gate drive will not fully enhance the channel.

What is the Rds(on) and gate charge of STD9N65M2?

Maximum on-resistance is 900 mOhm at 2.5 A drain current with 10 V gate drive.