STD95NH02LT4 — a 24V N-channel STripFET now in its end-of-life phase
Its key parametric is a maximum on-resistance of 5mOhm at 40A with 10V gate drive, paired with a gate charge of 17nC at 5V — numbers that made it a solid choice for low-voltage, high-efficiency switching in automotive and industrial DC-DC converters, load switches, and motor pre-drive stages.
The 5mOhm maximum on-resistance at 40A and 10V gate drive is the headline figure that drove selection for low-voltage synchronous rectification and high-current load switching. The 17nC gate charge at 5V is low enough to keep switching losses manageable in the 100–300 kHz range, which is where this FET typically ran. The drive voltage range (5V and 10V) means it works with both logic-level gate drivers and standard 10V gate rails, though the Rds(on) at 5V is not specified — expect it to be higher than the 10V figure, so a 10V rail is preferred for minimum conduction loss.
The DPAK (TO-252-3) package with exposed tab is rated for 100W power dissipation at the case. The 2070pF input capacitance at 15V Vds is moderate; the gate driver should be sized to handle the peak current needed for the 17nC charge without excessive ringing.