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STMicroelectronics STD95N4F3 — Discrete Semiconductors

STD95N4F3 STMicroelectronics N-Channel MOSFET, 40V 80A DPAK

MPNSTD95N4F3
Active

STMicroelectronics STD95N4F3, STripFET™ III series, N-Channel MOSFET, 40 V drain-source, 80 A continuous drain, 6.5 mOhm Rds(on), DPAK (TO-252-3) surface-mount package.

$1.9600Ref. price · indicative, final on quote
STMicroelectronics STD95N4F3 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSTripFET™ III
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD95N4F3 specifications
ParameterValue
SeriesSTripFET™ III
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2200 pF @ 25 V

Product details

Thermal and package constraints for the board layout

The STD95N4F3: Maximum power dissipation is 110 W at case temperature (Tc), but the junction-to-ambient thermal resistance in the DPAK package means the real-world dissipation is limited by the PCB copper area on the drain tab — a 1-inch² pad on a 2-oz copper board typically handles 2-3 W continuous. Operating junction temperature range spans -55 °C to 175 °C, giving headroom for high-ambient environments like engine bays or industrial enclosures where the local air temperature reaches 85-105 °C.

Compliance and sourcing posture

ROHS3 compliant per STMicroelectronics — no restricted substances above the threshold limits, and no exemption expiry concerns for EU market placement.

Frequently asked questions

Will STD95N4F3 drop into a board designed for STD80N4F6?

Both parts share the same DPAK (TO-252-3) package footprint and are N-channel 40 V rated, but the STD80N4F6 is an automotive AEC-Q101 grade device with a different gate charge profile (36 nC vs 54 nC) and lower Rds(on) (6 mOhm vs 6.5 mOhm). The pinout is identical, so a functional swap is possible, but the gate-drive timing and conduction losses differ — verify the drive circuit margin before substitution.