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STMicroelectronics STD90NS3LLH7 — Discrete Semiconductors

STD90NS3LLH7 N-Channel MOSFET, 30V, 3.4mOhm, DPAK

MPNSTD90NS3LLH7
Obsolete

STMicroelectronics STripFET™ H7, N-Channel MOSFET, 30V Vdss, 80A Id, 3.4mOhm Rds(on) at 10V, 13.7nC Qg, DPAK (TO-252) package, -55°C to 150°C.

$1.5000Ref. price · indicative, final on quote
STMicroelectronics STD90NS3LLH7 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD90NS3LLH7 specifications
ParameterValue
SeriesSTripFET™ H7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation57W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureSchottky Diode (Body)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1.2V @ 1mA
Rds on (Max) @ id, vgs3.4mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs13.7 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2110 pF @ 25 V

Product details

30V, 80A, 3.4mOhm — low-voltage power switch for high-density designs

The STD90NS3LLH7 is an N-channel MOSFET from ST's STripFET™ H7 series, built for low-voltage, high-current switching.

A Schottky diode is integrated into the body diode structure, which reduces reverse-recovery charge and softens the turn-off transient in freewheeling applications — useful in synchronous buck converters where the MOSFET body diode conducts during dead time. Gate charge totals 13.7 nC at 4.5 V, and the input capacitance is 2110 pF at 25 V Vds.

DPAK package — thermal path and assembly fit

Obsolete — sourcing the STD90NS3LLH7 today

The STD90NS3LLH7 carries an obsolete lifecycle status. For a BOM line that depends on this part, qualifying a pin-compatible alternative from the same STripFET H7 family is the prudent step to avoid a single-source lock on an end-of-life device.

Frequently asked questions

Where can I buy STD90NS3LLH7?

The STD90NS3LLH7 is obsolete and sourced through independent distribution.

Does STD90NS3LLH7 have a Schottky diode?

Yes, the FET feature includes a Schottky diode integrated into the body diode structure, which improves reverse-recovery performance in freewheeling applications.

What are the specifications of STD90NS3LLH7?

Gate charge is 13.7 nC at 4.5 V, input capacitance is 2110 pF at 25 V Vds, and the junction temperature range is -55°C to 150°C. It comes in a DPAK (TO-252) surface-mount package.