STMicroelectronics STripFET™ III, STD90N03L, N-Channel MOSFET, 30V Vdss, 80A Id, 5.7mOhm Rds(on) @ 40A/10V, 32nC Qg @ 5V, DPAK (TO-252), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | STripFET™ III |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 95W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 5.7mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 32 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 2805 pF @ 25 V |
Input capacitance is 2805 pF at 25 V Vds, a figure to budget for in the gate-drive loop.
The DPAK (TO-252) surface-mount package with a tab for the drain connection needs a good thermal via pattern on the PCB to dissipate the 95 W maximum power.
For a pin-compatible replacement, you would need to evaluate current STMicroelectronics N-channel MOSFETs in the DPAK package with similar 30 V Vdss and 80 A current ratings, or source the original part through independent distribution against an RFQ.