The through-hole TO-251 (I-PAK) package suits board-level mounting where a compact three-lead footprint is preferred over larger TO-220 or D²PAK parts.
The STD90N02L-1 is listed as obsolete. For new designs, a current-production STripFET™ or similar low-voltage N-channel MOSFET in a TO-251 or surface-mount equivalent should be evaluated.
The gate charge of 22 nC at 5 V is moderate, so a standard gate driver or MCU output can switch it at tens of kilohertz without excessive drive losses. Input capacitance of 2050 pF at 16 V Vds gives a rough estimate of switching energy; pair it with a gate resistor to control dV/dt in bridge topologies. The 60 A continuous rating is at case temperature 25°C — derate linearly above that; at 100°C case the current capability drops roughly by half. The ±20 V maximum gate-source voltage provides margin for 12 V gate drive rails, but transient spikes above that limit will damage the oxide.