For any new design, a replacement part should be identified.
Key ratings for fit: Rds(on), current, voltage, and temperature
Gate charge is specified at 22 nC at 5 V.
Maximum power dissipation is 70 W at case temperature.

STMicroelectronics STD90N02L, N-Channel MOSFET, STripFET™ III, 25 V Vdss, 60 A Id, 6 mOhm Rds(on) at 10 V, DPAK package, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | STripFET™ III |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 60A (Tc) |
| Power dissipation | 70W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 1.8V @ 250µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 2050 pF @ 16 V |
For any new design, a replacement part should be identified.
Gate charge is specified at 22 nC at 5 V.
Maximum power dissipation is 70 W at case temperature.
Yes, STD90N02L is listed as obsolete by STMicroelectronics.
For a pin-compatible alternative, consult ST's current N-channel MOSFET portfolio in DPAK with similar Rds(on) and voltage ratings.