STMicroelectronics MDmesh™ series, STD7NM80, N-Channel MOSFET, 800 V drain-source, 6.5 A continuous drain, 1.05 Ohm Rds(on) at 10 V, 18 nC gate charge, DPAK package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.5A (Tc) |
| Power dissipation | 90W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 1.05Ohm @ 3.25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 620 pF @ 25 V |
Maximum on-resistance is 1.05 Ohm at 3.25 A drain current with 10 V gate drive. Input capacitance is 620 pF at 25 V drain-source, which keeps the Miller plateau narrow and reduces cross-conduction during hard-switching transitions.
Yes, it is listed as ROHS3 Compliant.
No official cross-reference or second-source alternate is listed for this specific order code. For dual-sourcing, evaluate parts from the same MDmesh™ family with matching 800 V, 6.5 A, DPAK ratings — confirm Rds(on) and gate charge against your thermal and switching budget.