STMicroelectronics MDmesh™ II series, N-Channel MOSFET, STD7NM64N, 640 V drain-source, 5 A continuous drain, 1.05 Ohm Rds(on) at 2.5 A, 10 V, DPAK surface-mount package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 640 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 60W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.05Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 363 pF @ 50 V |
The 640 V Vdss gives solid headroom for 240 V AC or 400 V DC rails, even with switching transients. The 1.05 Ohm Rds(on) at 10 V gate drive is the figure to use for conduction loss calculations — at 5 A that's about 26 W, which the 60 W package rating can handle with a good thermal pad and airflow.
For new designs, look at ST's current MDmesh series in the same voltage and current class.
No official replacement is listed in the record. For new designs, evaluate ST's current MDmesh series MOSFETs with a 640 V or higher drain-source rating and 5 A or higher continuous drain current in a DPAK package.
Maximum on-resistance is 1.05 Ohm at 2.5 A drain current and 10 V gate drive. The maximum gate threshold voltage is 4 V at 250 µA drain current.
The STD7NM64N has a 640 V drain-source rating versus 600 V for the STP7NM60N, and comes in a DPAK surface-mount package versus the TO-220 through-hole of the STP7NM60N. They are not pin-compatible — the package difference means a different PCB footprint.