The STD7NM60N is a 600 V, 5 A N-channel MOSFET from ST's MDmesh™ II series, housed in a DPAK (TO-252) surface-mount package. It is designed for switched-mode power supplies, flyback converters, and PFC stages where the primary-side switch sees the full DC bus voltage. The 900 mOhm maximum on-resistance is specified at 2.5 A drain current with 10 V gate drive. Total gate charge is 14 nC at 10 V. Input capacitance is 363 pF at 50 V Vds.
The base product number is STD7NM60, and the 'N' suffix indicates the lead-free / ROHS-compliant variant.
DPAK footprint and thermal budget
The DPAK (TO-252) footprint with the exposed drain tab requires a copper pad on the PCB for heat sinking — the 45 W power dissipation rating at case temperature assumes a copper pad on a 2-oz copper layer. The gate threshold voltage maximum is 4 V at 250 µA, which means a 5 V logic-level gate drive will not fully enhance the channel — the 10 V drive rail is mandatory for the rated Rds(on). The ±25 V maximum gate-source rating provides margin for ringing on the gate node in hard-switching topologies.