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STMicroelectronics STD7NM50N-1 — Discrete Semiconductors

STD7NM50N-1 N-Channel MOSFET, 500V 5A, MDmesh™ II, TO-251

MPNSTD7NM50N-1
Obsolete

STMicroelectronics STD7NM50N-1, N-Channel MOSFET, MDmesh™ II, 500 V Vdss, 5 A Id, 780 mOhm Rds(on), 12 nC Qg, TO-251-3 IPak through-hole, -55 to 150 °C.

STMicroelectronics STD7NM50N-1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STD7NM50N-1 specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs780mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 50 V

Product details

500 V N-channel in a TO-251 IPak — what you need to know

The STD7NM50N-1: It is housed in a TO-251-3 (IPak) through-hole package, which suits medium-power switched-mode circuits where board-space is constrained but through-hole mounting is preferred for thermal and mechanical robustness. The 780 mOhm maximum on-resistance at 2.5 A gate drive defines its conduction loss profile; paired with the 12 nC typical gate charge, it is sized for flyback converters, auxiliary power supplies, and PFC stages in the 50–150 W range.

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What the 500 V / 5 A rating means for your design

The 500 V Vdss rating gives headroom for offline rectified DC rails (typical 375 V bus) with margin for switching transients. The 5 A continuous drain current is specified at case temperature 25°C; derate linearly with Tc.

Frequently asked questions

What is the cross reference for STD7NM50N-1?

STMicroelectronics has not published an official cross-reference or successor for the STD7NM50N-1. The closest parametric match would be another N-channel 500 V MOSFET in a TO-251 (IPak) package with 5 A continuous drain current and 780 mOhm or lower Rds(on). Verify the gate charge, threshold voltage, and switching characteristics against your application before substituting.

Can STD7NM50N-1 be used in high-frequency circuits?

The 12 nC gate charge and 400 pF input capacitance at 50 V bias are moderate for a 500 V MOSFET, making it suitable for switching frequencies in the 50–150 kHz range typical of flyback and PFC stages. Above 200 kHz the switching losses may become significant due to the Miller charge; evaluate the total gate-drive loss and switching transition times in your specific topology.