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STMicroelectronics STD7NK40ZT4 — Discrete Semiconductors

STD7NK40ZT4 N-Ch 400V 5.4A DPAK MOSFET

MPNSTD7NK40ZT4
Active

STMicroelectronics STD7NK40ZT4 SuperMESH™ N-channel MOSFET, 400 V, 5.4 A, DPAK (TO-252), 1 Ω Rds(on) at 10 V, 26 nC gate charge, Tape & Reel.

$1.6200Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD7NK40ZT4 specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage400 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.4A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1Ohm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds535 pF @ 25 V

Product details

400 V N-channel switch in DPAK

The STD7NK40ZT4 is an N-channel enhancement-mode MOSFET from ST's SuperMESH™ series, housed in a DPAK (TO-252) surface-mount package. It is specified for 400 V drain-source breakdown and 5.4 A continuous drain current at 25 °C case temperature. With a maximum Rds(on) of 1 Ω at Vgs = 10 V and Id = 2.7 A, the on-resistance at the operating junction temperature will be higher — the 25 °C figure is the starting point for loss budgeting, not the in-circuit value.

Gate drive and switching loss budget

Total gate charge is 26 nC at Vgs = 10 V — the drive current required to switch at a given frequency is Qg × fsw. A 100 kHz switching rate draws 2.6 mA from the gate driver, well within the capability of a standard MOSFET driver IC. Input capacitance Ciss is 535 pF at Vds = 25 V, which sets the Miller plateau duration during switching transitions. The 10 V drive voltage is the recommended gate bias for minimum on-resistance; the threshold is 4.5 V max at 50 µA drain current, so a 5 V logic-level gate signal may not fully enhance the channel. Maximum gate-source voltage is ±30 V — a standard 12 V or 15 V gate drive is safe, but a series resistor is advisable if the driver supply can overshoot beyond the abs-max rating during fast turn-off.

Thermal envelope and package integration

The DPAK (TO-252) footprint with the exposed drain tab requires a copper pad on the PCB for heat sinking. The maximum power dissipation is 70 W at case temperature — the actual continuous dissipation is derated by the junction-to-ambient thermal resistance of the board layout, typically 50–80 °C/W on a 1 oz copper pour. Operating junction temperature range is -55 °C to +150 °C, which covers industrial and automotive under-hood environments. The 150 °C ceiling is the absolute limit; reliability degrades above 125 °C continuous, so a 20 % derating on power dissipation is standard practice for a 125 °C max junction design.

Active lifecycle and sourcing posture

The part is available through independent distribution channels. Sourcing is quoted to order against the BOM line — availability and current pricing are confirmed at RFQ time, with no stock-holding claim on this listing.

Frequently asked questions

What is the Rds(on) of the STD7NK40ZT4 at the operating junction temperature?

The datasheet specifies a maximum Rds(on) of 1 Ω at 25 °C junction with Vgs = 10 V and Id = 2.7 A. At a 125 °C junction, the on-resistance typically increases by a factor of 1.6–1.8× — budget approximately 1.6–1.8 Ω for loss calculations at elevated temperature.