300 V N-channel SuperMESH MOSFET in DPAK
The STMicroelectronics STD7NK30Z is a 300 V N-channel MOSFET built on the SuperMESH technology platform. It delivers a continuous drain current of 5 A at 25°C case temperature and a maximum Rds(on) of 900 mOhm at Vgs = 10 V and Id = 2.5 A.
Actual Rds(on) rises with junction temperature — expect roughly 1.8× at 150°C, which pushes conduction losses to about 2.25 W at 2.5 A RMS. The total gate charge of 13 nC at 10 V keeps the drive power low; a 100 kHz switching frequency draws only 1.3 mA average from the gate driver. Input capacitance (Ciss) is 380 pF at Vds = 25 V, which limits the switching speed in high-impedance drive circuits. For fast edge rates, a gate driver with at least 1 A peak current is recommended to charge Ciss within the target dead-time window.
