STMicroelectronics MDmesh™ K5 series, STD7N90K5, N-Channel MOSFET, 900 V drain-source, 7 A continuous drain at 25°C, 110 W dissipation, DPAK surface-mount package, -55 to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
The STD7N90K5: The 110 W maximum power dissipation assumes the tab is soldered to a substantial copper island; without it, the device self-heats rapidly above a few watts.
The DPAK (TO-252) package is surface-mount, but the exposed tab is the drain terminal and the primary heat path. The 110 W dissipation figure is a case-temperature-limited rating.
The STD7N90K5 is from the newer MDmesh K5 series, which typically offers improved switching performance and lower on-resistance compared to the earlier K4 generation. Pin-compatible in the same DPAK footprint, but check the gate charge and Rds(on) curves in the respective datasheets to confirm the switching loss trade-off in your specific topology.