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STMicroelectronics STD7N80K5 — Discrete Semiconductors

STD7N80K5 N-Channel 800V 6A MOSFET, SuperMESH5™, DPAK

MPNSTD7N80K5
Active

STMicroelectronics SuperMESH5™ STD7N80K5, N-Channel MOSFET, 800V Vdss, 6A Id, 1.2Ohm Rds(on) @ 3A/10V, 13.4nC Qg, DPAK (TO-252), -55°C to 150°C.

$2.3200Ref. price · indicative, final on quote
STMicroelectronics STD7N80K5 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD7N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.2Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs13.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds360 pF @ 100 V

Product details

800 V, 6 A — the offline power switch in DPAK

The STD7N80K5: This voltage-current combination targets the primary-side switch in offline flyback converters, PFC boost stages, and auxiliary power supplies.

1.2 Ohm Rds(on) and 13.4 nC gate charge — conduction vs. switching trade-off

Maximum on-resistance is 1.2 Ohm at 3 A drain current with 10 V gate drive — the Rds(on) at the rated 6 A will be higher due to self-heating, so the designer should budget conduction loss using the typical Rds(on) vs. temperature curve from the datasheet. The 13.4 nC total gate charge at 10 V is low enough that many PWM controllers with 1 A peak drive capability can switch this FET at 65–100 kHz without an external driver stage. Input capacitance Ciss is 360 pF at 100 V Vds, which keeps the switching node capacitance manageable and reduces the turn-on energy loss in hard-switched topologies.

Frequently asked questions

What is the Vgs(th) of STD7N80K5?

The maximum gate threshold voltage Vgs(th) is 5 V at a drain current of 100 µA. This is the voltage at which the FET just begins to conduct — the typical threshold will be lower, but the 5 V maximum ensures the device is fully off with a 0 V gate signal across the full temperature range.

Can I use STD7N80K5 for 800 V switching?

Yes. The drain-to-source voltage rating Vdss is 800 V, so the part is rated for 800 V blocking. In a typical offline flyback converter with a 400 V DC bus (rectified 230 VAC), the 800 V rating provides adequate margin for the reflected voltage and leakage inductance spike. For universal input (90–265 VAC) designs, the 800 V rating is conservative.

Is STD7N80K5 RoHS compliant?

Yes, the STD7N80K5 is ROHS3 compliant, meaning it meets the EU RoHS directive including the exemption-free requirements for all ten restricted substances.