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STMicroelectronics STD7N60DM2 — Discrete Semiconductors

STD7N60DM2 N-Channel MOSFET, 600 V, 6 A, MDmesh DM2

MPNSTD7N60DM2
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STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, 600 V drain-source, 6 A continuous drain at 25°C, 900 mOhm Rds(on) at 3 A, 10 V, 7.5 nC gate charge, DPAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.

$0.6056Ref. price · indicative, final on quote
STMicroelectronics STD7N60DM2 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD7N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs900mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs7.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds324 pF @ 100 V

Product details

600 V, 6 A N-channel MOSFET in DPAK — MDmesh DM2 series

The STD7N60DM2: The 7.5 nC gate charge suits offline flyback converters, PFC stages, and auxiliary power supplies. The DPAK (TO-252) surface-mount package supports automated assembly.

The 7.5 nC gate charge allows switching with a standard gate-driver IC or microcontroller GPIO.

Temperature range and junction limits

Derate the continuous drain current above 25°C per the datasheet curve.

Package and footprint notes

The base product number STD7N60 covers a family of variants; the DM2 suffix identifies the MDmesh DM2 generation.

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