525 V / 6 A N-Channel MOSFET in DPAK
SuperFREDmesh3 — fast-recovery body diode
The SuperFREDmesh3™ series integrates a fast-recovery body diode, which reduces reverse-recovery charge and switching losses in bridge topologies like half-bridge and full-bridge converters. This makes the STD7N52DK3 better suited for hard-switched offline power supplies and PFC stages than a standard MOSFET with a slow body diode.
Key ratings for the design-in decision
The 525 V Vdss rating provides adequate margin for universal-input offline converters (up to 400 VDC bus) and for 240 VAC applications with derating. The 6 A continuous current is a package-limited figure — the actual safe operating area depends on heatsinking and ambient temperature. The maximum junction temperature is 150°C, typical for silicon MOSFETs in this class.