Gate charge totals 12 nC at 10 V, which keeps the switching losses low in a flyback converter running at 65–100 kHz. The 270 pF input capacitance at 100 V drain bias means the gate driver sees a light capacitive load — a small-signal MOSFET driver or a simple resistor-capacitor network can handle it.
STD7LN80K5 N-Channel MOSFET, 800 V, 5 A, DPAK
MPNSTD7LN80K5
Active
STMicroelectronics MDmesh™ series, STD7LN80K5, N-Channel MOSFET, 800 Vdss, 5 A Id, 1.15 Ohm Rds(on) at 2.5 A, 10 V, 12 nC Qg, DPAK (TO-252) surface mount, -55°C to 150°C junction.
$2.0800Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | MDmesh™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 85W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 1.15Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 270 pF @ 100 V |
Product details
Frequently asked questions
What is the closest pin-compatible alternative to STD7LN80K5?
For a pin-compatible swap, compare the DPAK footprint and the 800 V / 5 A rating against other MDmesh™ or similar N-channel parts — but confirm the gate threshold and Rds(on) match your design margin.